? semiconductor components industries, llc, 2014 may, 2014 ? rev. 0 1 publication order number: NTR5105P/d NTR5105P power mosfet ?60 v, ?211 ma, single p?channel sot?23 package features ? trench technology ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? small signal load switch ? analog switch maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss ?60 v gate?to?source v oltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d ?196 ma t a = 85 c ?141 t 5 s t a = 25 c ?211 t a = 85 c ?152 power dissipation (note 1) steady state t a = 25 c p d 347 mw t 5 s 403 pulsed drain current t p = 10 s i dm ?784 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) (note 2) i s ?347 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 360 c/w junction?to?ambient ? t 5 s (note 1) r ja 310 c/w 1. surface?mounted on fr4 board using 1 in. sq. pad size (cu area ? 1.127 in. sq. [2 oz.] including traces). 2. surface?mounted on fr4 board using the minimum recommended pad size of 30 mm2, 2 oz. cu pad. g d s device package shipping ? ordering information http://onsemi.com ?60 v 6 @ ?4.5 v 5 @ ?10 v r ds(on) max ?211 ma i d max v (br)dss sot?23 case 318 style 21 marking diagram/ pin assignment 2 1 3 p?channel NTR5105Pt1g sot?23 (pb?free) 3000 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. t05 = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 3 drain 1 gate 2 source t05 m
NTR5105P http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?60 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j reference to 25 c, i d = ?250 a 6.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?60 v t j = 25 c ?1.0 a t j = 125 c ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?1.0 ?3.0 v negative threshold temperature co- efficient v gs(th) /t j 4.2 mv/ c drain?to?source on?resistance r ds(on) v gs = ?10 v, i d = ?100 ma 1.6 5.0 v gs = ?4.5 v, i d = ?100 ma 2.2 6.0 forward transconductance g fs v ds = ?5.0 v, i d = ?100 ma 227 ms charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ?25 v 30.3 pf output capacitance c oss 4.7 reverse transfer capacitance c rss 3.2 total gate charge q g(tot) v gs = ?5 v, v ds = ?25 v, i d = ?100 ma 1.0 nc threshold gate charge q g(th) 0.2 gate?to?source charge q gs 0.4 gate?to?drain charge q gd 0.3 switching characteristics (note 4) turn?on delay time t d(on) v gs = ?5 v, v dd = ?48 v, i d = ?100 ma, r g = 1 5.8 ns rise time t r 4.0 turn?off delay time t d(off) 8.8 fall time t f 12.8 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?100 ma t j = 25 c 0.78 1.0 v t j = 125 c 0.59 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTR5105P http://onsemi.com 3 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics ?v ds , drain?to?source voltage (v) ?v gs , gate?t o?source voltage (v) 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.7 0.8 1.0 8 7 6 5 4 3 2 1 0.1 0.2 0.3 0.5 0.6 0.7 0.9 1.0 figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage ?v gs , gate?t o?source voltage (v) ?i d , drain current (a) 9 8 7 6 5 4 3 2 0 1 2 4 5 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0 1 2 3 4 5 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) ?v ds , drain?to?source voltage (v) 125 100 75 50 25 0 ?25 ?50 0.5 1.0 1.5 2.0 60 50 40 30 20 10 0.1 1 10 100 1000 ?i d , drain current (a) ?i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , normalized drain?to? source resistance ( ) ?i dss , leakage (na) 0.5 0.6 0.9 t j = 25 c ?4.0 v ?3.5 v ?3.0 v ?2.5 v ?4.5 v v gs = ?5 v to ?10 v t j = 25 c 0.4 0.8 t j = 125 c t j = ?55 c 3 6 7 t j = 25 c i d = ?100 ma 0.5 0.9 v gs = ?4.5 v v gs = ?10 v t j = 25 c 150 i d = ?100 ma v gs = ?4.5 v v gs = ?10 v t j = 85 c t j = 125 c t j = 150 c r ds(on) , drain?to?source resistance ( ) v ds = ?10 v 10 1.0
NTR5105P http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge ?v ds , drain?to?source voltage (v) q g , total gate charge (nc) 60 50 40 30 20 10 0 0 10 20 30 40 1.6 1.4 1.2 1.0 0.6 0.4 0.2 0 0 1 3 4 6 7 9 10 figure 9. diode forward voltage vs. current ?v sd , source?to?drain voltage (v) 0.9 0.7 0.6 0.1 10 figure 10. maximum rated forward biased safe operating area ?v ds , drain?to?source voltage (v) 1000 100 10 1 0.1 0.001 0.01 0.1 1 10 c, capacitance (pf) ?v gs , gate?t o?source voltage (v) ?i s , source current (a) ?i d , drain current (a) v gs = 0 v t j = 25 c f = 1 mhz c iss c oss c rss v gs ?30 v single pulse t c = 25 c 10 ms 100 s 1 ms dc r ds(on) limit thermal limit package limit 0.8 1.2 1 v gs = 0 v 0.8 1.8 2 5 8 v ds = ?25 v i d = ?100 ma t j = 25 c q t q gs q gd t j = 85 c t j = 25 c 1.1 1.0 figure 11. thermal response pulse time (sec) 0.01 0.001 1 0.0001 10 0.00001 0.1 0.000001 0.1 1 10 100 1000 r ja(t) ( c/w) 100 1000 50% duty cycle single pulse 20% 10% 5% 2% 1%
NTR5105P http://onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 21: pin 1. gate 2. source 3. drain *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTR5105P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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